savantic semiconductor product specification silicon pnp power transistors 2SB1530 d escription with to-220fa package high v c eo complement to type 2sd2337 applications for low frequency power amplifier color tv vertical deflection output applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -6 v i c collector current (dc) -2 a i cm collector current-peak -5 a t c =25 20 p c collector power dissipation t a =25 1.5 w t j junction temperature 150 t stg storage temperature -45~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1530 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma , r be = < -150 v v (br)ebo emitter-base breakdown voltage i e =-5ma , i c =0 -6 v v cesat collector-emitter saturation voltage i c =-500ma ;i b =-50ma -3.0 v v be base-emitter on voltage i c =-50ma ; v ce =-4v -1.0 v i cbo collector cut-off current v cb =-120v ;i e =0 -1 a h fe-1 dc current gain i c =-50ma ; v ce =-4v 60 200 h fe-2 dc current gain i c =-500ma ; v ce =-10v 60 h fe-1 classifications b c 60-120 100-200
savantic semiconductor product specification 3 silicon power transistors 2SB1530 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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